Progress in Polycrystalline Thin-Film Cu(In,Ga)Se2 Solar Cells

Progress in Polycrystalline Thin-Film Cu(In,Ga)Se2 Solar Cells

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For some time, the chalcopyrite semiconductor CuInSe2 and its alloy with Ga and/or S [Cu(InGa)Se2 or Cu(InGa)(Se,S)2], commonly referred as CIGS, have been leading thin-film material candidates for incorporation in high-efficiency photovoltaic devices.CuInSe2-based solar cells have shown long-term stability Table Grill and the highest conversion efficiencies among all thin-film solar cells, reaching 20%.A variety of methods have been reported to prepare CIGS thin film.Efficiency of solar cells depends upon the various deposition methods as they control optoelectronic properties of the layers 7 Piece Bedroom Package and interfaces.

CIGS thin film grown on glass or flexible (metal foil, polyimide) substrates require p-type absorber layers of optimum optoelectronic properties and n-type wideband gap partner layers to form the p-n junction.Transparent conducting oxide and specific metal layers are used for front and back contacts.Progress made in the field of CIGS solar cell in recent years has been reviewed.